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Measuring with Simcenter T3STER SI is very easy. Fix the sample to the desired thermal environment, connect it through electrical wires to the tester, similarly to the normal operating conditions in case of discrete devices such as diodes, LED-s or transistors. Even complex digital IC-s can be tested through their substrate diodes, using 4 wires. 
The software provides guidance for the connections to make the system more easy to learn and use.

Simcenter T3STER SI can test most common semiconductor types, diodes, MOSFET-s, IGBT-s, digital VLSI IC-s and more. Our engineering team is always keen on finding suitable test approaches for more 'exotic' devices if necessary.

Simcenter T3STER SI measurements are fast, as fast as the physical properties of a device allow. Using the JEDEC JESD 51-1 static test method, Simcenter T3STER will heat up a component once, then capture the cooling curve in real time, as the device cools down. Due to the excellent signal-to-noise ratio, it is enough to capture the response curve only once. It is safe to say that Simcenter T3STER SI applies the fastest test methodology possible.

Simcenter T3STER SI allows in-situ tests, it can measure the thermal performance of samples in their native, operational environment, no matter it is air cooling, cold plate mounting, a water jacket, or a component on a PCB. Our technology does not use thermocouples nor requires opening up the package as IR tests would do. This way we test the true thermal performance without distracting the thermal boundary conditions even to the slightest extent.

For more accurate simulations, a detailed 3D equivalent of the package is the best, generic option. Simulation results are however as accurate as the model itself, any modeling error in material properties or geometry can result in inaccurate simulation data. Unfortunately material properties of thermal interface layers are often uncertain parameters even for component makers. Using Simcenter T3STER SI measurements as reference, our Simcenter Flotherm and Simcenter FLOEFD tools can calibrate component models to create true digital twins of the real component to achieve utmost modeling accuracy. Once the component model is calibrated to Simcenter T3STER SI tests, it should behave as the real physical sample for any arbitrary power input, making even complex transient simulations highly accurate.

Simcenter T3STER SI provides both repeatable and reproducible test results. Repeated measurements on the same sample will provide the same test data over and over again, eliminating the need for multiple test runs and averaging in most standard situations. This saves valuable testing time.

Simcenter T3STER SI measurements are reproducible as well. Measuring the same sample with any calibrated Simcenter T3STER SI system we produce will always provide comparable test results. This makes Simcenter T3STER SI measurements a 'common language' among different test groups and organizations when they share and compare information on semiconductor thermal performance. 

The thermal transient response curves are used for further analysis after Simcenter T3STER SI measurements. Our Simcenter T3STER-Master software provided with the hardware can convert the thermal responses into structure functions, which describe the heat-flow path from the semiconductor junction to the ambient. Structure functions have multiple use, can help define standard thermal metrics, such as RthJC, RthJA, can help comparison among different material choices or support failure analysis by highlighting potential structural errors in key thermal interface layers in a semiconductor package and its thermal environment. 

Simcenter T3STER SI measurements are non-destructive. After taking a test on a sample, in every case the sample remains operational. This allows Simcenter T3STER SI tests to be used in quality check, or even makes monitoring and sorting of actual production units based on their thermal performance.

Structure functions calculated based on Simcenter T3STER SI test results are thermal R-C network models. Cutting the model at the case node of the component provides a 1D thermal behavior model of the tested package. Exporting this model to Simcenter Flotherm or Simcenter FLOEFD allows a quick and reliable method to generate a test based thermal model and simulate its behavior in a complex 3D CFD environment. This method is recommended for discrete power semiconductor packages, such as TO-220, TO-247 or common LED packages.